CRYSTAL-BINARY COLLISION SIMULATION OF ATOMIC-COLLISIONS AND DYNAMIC DAMAGE BUILDUP IN CRYSTALLINE SILICON

被引：10

作者：

CHAKAROV, IR

WEBB, RP

机构：

[1] Dept, of EE Eng., Univ. of Surrey, Guildford

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1994年 / 130卷

关键词：

D O I：

10.1080/10420159408219802

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

Channeling profiles of 5-200 keVB(+), 100-500 keV P+ and 40-300 keV As+ implanted near [100] and [110] axes in crystal silicon are calculated using the binary collision approximation code CRYSTAL. Calculated profiles are compared to carefully chosen experimental ones. Also, high dose phosphorus profiles with damage accumulation are compared to published experimental data.

引用

页码：447 / 452

页数：6

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