CYCLOTRON RESONANCE OF HOLES IN GASB

被引：44

作者：

STRADLIN.RA

机构：

来源：

PHYSICS LETTERS | 1966年 / 20卷 / 03期

关键词：

D O I：

10.1016/0031-9163(66)90330-1

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

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页码：217 / &

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[1] CYCLOTRON RESONANCE IN P-TYPE INSB AT MILLIMETRE WAVELENGTHS
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[4] BAND PARAMETERS OF SEMICONDUCTORS WITH ZINCBLENDE, WURTZITE, AND GERMANIUM STRUCTURE
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[5] CYCLOTRON RESONANCE OF ELECTRONS AND HOLES IN SILICON AND GERMANIUM CRYSTALS
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[6] INVESTIGATION INTO APPARENT PURITY LIMIT IN GASB
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[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1964, 25 (05) : 451 - &
[7] CYCLOTRON RESONANCE OF ELECTRONS IN SILICON AT TEMPERATURES UP TO 200 DEGREES K
STRADLIN.RA
ZHUKOV, VV
[J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1966, 87 (555P): : 263 - &