CZOCHRALSKI GROWTH OF OPTICAL QUALITY BISMUTH SILICON-OXIDE (BI12SIO20)

被引：69

作者：

TANGUAY, AR ^{[1
]}

MROCZKOWSKI, S ^{[1
]}

BARKER, RC ^{[1
]}

机构：

[1] YALE UNIV,DEPT ENGN & APPL SCI,NEW HAVEN,CT 06520

来源：

JOURNAL OF CRYSTAL GROWTH | 1977年 / 42卷 / DEC期

关键词：

D O I：

10.1016/0022-0248(77)90227-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：431 / 434

页数：4

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[3] HIGH-SENSITIVITY READ-WRITE VOLUME HOLOGRAPHIC STORAGE IN BI12SIO20 AND BI12GEO20 CRYSTALS [J].

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MICHERON, F .

APPLIED PHYSICS LETTERS, 1976, 29 (09) :591-593

[4] IMAGING CHARACTERISTICS OF ITEK PROM [J].

LIPSON, SG ;

NISENSON, P .

APPLIED OPTICS, 1974, 13 (09) :2052-2060

[5]

MARIE G, 1974, ADV IMAGE PICKUP DIS, V1

[6]

TANGUAY AR, UNPUBLISHED

[7] SIMULATED ROTATIONAL INSTABILITIES IN MOLTEN BISMUTH SILICON-OXIDE [J].

WHIFFIN, PAC ;

BRUTON, TM ;

BRICE, JC .

JOURNAL OF CRYSTAL GROWTH, 1976, 32 (02) :205-210

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