ELECTRONIC-STRUCTURE OF SEMI-INFINITE III-V COMPOUND SEMICONDUCTOR SURFACES AND INTERFACES - APPLICATION TO INAS-GASB(110)

被引：4

作者：

DANDEKAR, NV

MADHUKAR, A

LOWRY, DN

机构：

[1] UNIV SO CALIF, DEPT PHYS, LOS ANGELES, CA 90007 USA

[2] UNIV NEW S WALES, DEPT PHYS, SYDNEY 2033, NEW S WALES, AUSTRALIA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1979年 / 16卷 / 05期

关键词：

D O I：

10.1116/1.570200

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1364 / 1369

页数：6

共 16 条

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[2] TIGHT-BINDING CALCULATIONS OF VALENCE BANDS OF DIAMOND AND ZINCBLENDE CRYSTALS
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COHEN, ML
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[3] (110) SURFACE-STATES OF GAAS - SENSITIVITY OF ELECTRONIC-STRUCTURE TO SURFACE-STRUCTURE
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[J]. PHYSICAL REVIEW B, 1978, 18 (04) : 1800 - 1812
[4] OBSERVATION OF SEMICONDUCTOR-SEMIMETAL TRANSITION IN INAS-GASB SUPER-LATTICES
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ESAKI, L
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1504 - 1505
[5] Relationship of surface-state band structure to surface atomic configuration of zinc blende (110)
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Freeman, S.
[J]. PHYSICAL REVIEW B-SOLID STATE, 1970, 2 (08): : 3255 - 3272
[6] LEVINE JD, 1970, PHYS REV B, V2, P3272
[7] SELF-CONSISTENT ELECTRONIC STATES FOR RECONSTRUCTED SI VACANCY MODELS
LOUIE, SG
SCHLUTER, M
CHELIKOWSKY, JR
COHEN, ML
[J]. PHYSICAL REVIEW B, 1976, 13 (04): : 1654 - 1663
[8] ELECTRONIC STATES AT UNRELAXED AND RELAXED GAAS (110) SURFACES
MELE, EJ
JOANNOPOULOS, JD
[J]. PHYSICAL REVIEW B, 1978, 17 (04) : 1816 - 1827
[9] TIGHT-BINDING STUDY OF ELECTRONIC-STRUCTURE OF INAS-GASB (001) SUPER-LATTICE
NUCHO, RN
MADHUKAR, A
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04): : 1530 - 1534
[10] SELF-CONSISTENT CALCULATIONS OF INTERFACE STATES AND ELECTRONIC-STRUCTURE OF (110) INTERFACES OF GE-GAAS AND ALAS-GAAS
PICKETT, WE
LOUIE, SG
COHEN, ML
[J]. PHYSICAL REVIEW B, 1978, 17 (02) : 815 - 828

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