PHOTOCAPACITANCE EFFECTS IN DRY PROCESSED CU2S-CDS HETEROJUNCTIONS

被引：5

作者：

GOLDENBLUM, A

OPREA, A

机构：

[1] Institute of Physics and Technology of Materials, Bucharest

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1994年 / 27卷 / 03期

关键词：

D O I：

10.1088/0022-3727/27/3/024

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The peculiarities of the photocapacitance effect in dry processed Cu2S-CdS heterojunction, have been investigated. The light flux dependence of capacitance is analysed. The main effect of low-level illumination is the narrowing of the 'intrinsic' layer that is formed as a consequence of Cu diffusion from the Cu2S layer. It was found that, in photocapacitance effects, a major role is played by the intermediate recombination centres present in the near-interface region.

引用

页码：582 / 586

页数：5

共 23 条

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[2]

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[3]

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