BOUND MULTIPLE-EXCITON COMPLEXES IN SILICON AT HIGH DOPING LEVELS

被引：16

作者：

SAUER, R ^{[1
]}

机构：

[1] UNIV STUTTGART,PHYS INST,TEIL INST 4,WIEDERHOLD STR 13,D-7 STUTTGART 1,WEST GERMANY

来源：

关键词：

D O I：

10.1016/0038-1098(74)90972-7

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：481 / 483

页数：3

共 9 条

[1]

Alekseev A. S., 1970, Fizika Tverdogo Tela, V12, P3516

[2]

ALEKSEEV AS, 1971, FIZ TVERD TELA+, V12, P2855

CUTHBERT, JD .

PHYSICAL REVIEW B, 1970, 1 (04) :1552-&

[4]

GERSHENZON M, PRIVATE COMMUNICATIO

[5]

Kaminskii A. S., 1970, Zhurnal Eksperimental'noi i Teoreticheskoi Fiziki, V59, P1937

[6]

KAMINSKII AS, 1971, SOV PHYS JETP-USSR, V32, P1048

MARTIN, RW ;

PILKUHN, MH .

[8] CONDENSATION OF NONEQUILIBRIUM CHARGE-CARRIERS IN SEMICONDUCTORS [J].

POKROVSKII, Y .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1972, 11 (02) :385-+

[9] EVIDENCE FOR BOUND MULTIPLE-EXCITON COMPLEXES IN SILICON [J].

SAUER, R .