STABILITY OF POLYCRYSTALLINE SILICON-ON-COBALT DISILICIDE SILICON STRUCTURES

被引：13

作者：

MURARKA, SP

CHANG, CC

ADAMS, AC

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

[2] BELL COMMUN RES,REDBANK,NJ 07701

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1987年 / 5卷 / 04期

关键词：

D O I：

10.1116/1.583681

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：865 / 869

页数：5

共 15 条

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[9] IMPURITY EFFECTS IN TRANSITION-METAL SILICIDES [J].

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[10] INTERACTIONS IN METALLIZATION SYSTEMS FOR INTEGRATED-CIRCUITS [J].

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