HALL AND DRIFT MOBILITIES IN THIN POLYCRYSTALLINE SEMICONDUCTOR-FILMS

被引：6

作者：

BEDNARCZYK, D

BEDNARCZYK, J

机构：

[1] Department of Experimental Physics, Pedagogical University, 42-201 Czestochowa

来源：

THIN SOLID FILMS | 1979年 / 59卷 / 03期

关键词：

D O I：

10.1016/0040-6090(79)90437-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effect of an irregular electric charge distribution in crystallites on the Hall and drift mobilities is discussed in this paper. The influence of the intercrystallite potential barriers on the Hall and drift mobilities is considered in two extreme cases: (1) when the crystallite sizes are smaller than the mean free path in the bulk material; (2) when the crystallite sizes are at least several times greater than the mean free path. Exemplary numerical calculations for polycrystalline InSb films are also given. © 1979.

引用

页码：279 / 290

页数：12

共 22 条

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[2] BARRIER LIMITED MOBILITY IN THIN SEMICONDUCTOR FILMS
ANDERSON, JC
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[3] Bednarczyk D., 1974, Acta Physica Polonica A, VA46, P315
[4] Bednarczyk D., 1974, Acta Physica Polonica A, VA46, P685
[5] BEDNARCZYK D, 1977, ACTA PHYS POL A, V51, P827
[6] INTERCRYSTALLINE POTENTIAL BARRIERS DUE TO IRREGULARLY DISTRIBUTED TRAPS
BEDNARCZYK, D
BEDNARCZYK, J
WEGRZYN, A
[J]. THIN SOLID FILMS, 1976, 36 (01) : 165 - 169
[7] CARRIER CONCENTRATION IN THIN POLYCRYSTALLINE FILMS AS A FUNCTION OF CRYSTALLITE SIZE
BEDNARCZYK, D
BEDNARCZYK, J
WEGRZYN, A
[J]. THIN SOLID FILMS, 1977, 44 (02) : 137 - 140
[8] Bednarczyk J., 1969, Acta Physica Polonica, V36, P1011
[9] GOLAVANOV VV, 1965, PHYS STATUS SOLIDI, V8, P671
[10] GUNTHER KG, 1961, Z NATURFORSCH PT A, V16, P279

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