A SURVEY ON THE FLOATING ZONE CRYSTAL-GROWTH OF THE MONOCARBIDES OF IVA, VA AND VIA TRANSITION-METALS

被引:10
作者
TANAKA, T
OTANI, S
机构
来源
PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS | 1988年 / 16卷
关键词
D O I
10.1016/0146-3535(88)90013-5
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
引用
收藏
页码:1 / 18
页数:18
相关论文
共 41 条
[1]   STABLE CARBIDE FIELD EMITTER [J].
ADACHI, H ;
FUJII, K ;
ZAIMA, S ;
SHIBATA, Y ;
OSHIMA, C ;
OTANI, S ;
ISHIZAWA, Y .
APPLIED PHYSICS LETTERS, 1983, 43 (07) :702-703
[2]  
Billingham J., 1972, Journal of Crystal Growth, V13-14, P693, DOI 10.1016/0022-0248(72)90543-X
[3]   CRYSTAL-GROWTH OF TRANSITION-METAL COMPOUNDS TIC, TIN, AND ZRN BY A FLOATING ZONE TECHNIQUE [J].
CHRISTENSEN, AN .
JOURNAL OF CRYSTAL GROWTH, 1976, 33 (01) :99-104
[4]   GROWTH OF TRANSITION METAL CARBIDE SINGLE CRYSTALS BY RECRYSTALLIZATION .2. TRANSITION METAL CARBIDE RECRYSTALLIZATION AND CRYSTAL GROWTH [J].
FLEISCHER, LR ;
TOBIN, JM .
JOURNAL OF CRYSTAL GROWTH, 1971, 8 (03) :243-+
[5]  
FRENCH DN, 1968, ANISOTROPY SINGLE CR, V1, P55
[6]   GROWTH OF TUNGSTEN CARBIDE MONOCRYSTALS [J].
GERK, AP ;
GILMAN, JJ .
JOURNAL OF APPLIED PHYSICS, 1968, 39 (10) :4497-&
[7]  
HAGGERTY JS, 1968, AFMLTR68228 TECHN RE
[8]   PREPARATION OF VANADIUM CARBIDE SINGLE-CRYSTALS BY A FLOATING ZONE TECHNIQUE [J].
HOU, YC ;
OTANI, S ;
TANAKA, T ;
ISHIZAWA, Y .
JOURNAL OF CRYSTAL GROWTH, 1984, 68 (03) :733-740
[9]   OBSERVATION OF THE DEHAAS-VANALPHEN EFFECT IN WC [J].
ISHIZAWA, Y ;
TANAKA, T .
SOLID STATE COMMUNICATIONS, 1984, 51 (09) :743-745
[10]  
ISHIZAWA Y, IN PRESS