ACTIVATION OF ZN ACCEPTORS IN ALGAINP EPITAXIAL LAYERS GROWN ON MISORIENTED SUBSTRATES BY METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION

被引：20

作者：

HAMADA, H

HONDA, S

SHONO, M

HIROYAMA, R

YODOSHI, K

YAMAGUCHI, T

机构：

[1] Semiconductor Research Center, SANYO Electric. Co., Ltd., Hirakata, Osaka, 573

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 06期

关键词：

EPITAXIAL GROWTH; CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR GROWTH; SEMICONDUCTOR DEVICES AND MATERIALS;

D O I：

10.1049/el:19920369

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Activation of the Zn acceptors in AlGaInP epitaxial layers grown on misoriented substrates by metal organic chemical vapour deposition (MOCVD) has been successfully improved using post-heat treatment. The p-type carrier concentration and electrical activity in the (Al0.65Ga0.35)0.5In0.5P layers were 1.8 x 10(18) cm-3 and 0.7, respectively. Activation of the Zn acceptors was found to be attributable to the hydrogen in the AlGaInP layer.

引用

页码：585 / 587

页数：3

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