GROWTH AND CHARACTERIZATION OF 1.3 MU-M CW GAINASP-INP LASERS BY LIQUID-PHASE EPITAXY

被引：16

作者：

NG, WW

DAPKUS, PD

机构：

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1981年 / 17卷 / 02期

关键词：

D O I：

10.1109/JQE.1981.1071063

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：193 / 198

页数：6

共 18 条

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[7] THRESHOLD TEMPERATURE CHARACTERISTICS OF DOUBLE HETEROSTRUCTURE GA1-XALXAS LASERS [J].

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[9] ZN-DIFFUSED, STRIPE-GEOMETRY, DOUBLE-HETEROSTRUCTURE GALNASP-INP DIODE-LASERS [J].

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IEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (08) :694-697

[10] LOW THRESHOLD CURRENT-DENSITY (100) GAINASP-INP DOUBLE-HETEROSTRUCTURE LASERS FOR WAVELENGTH 1.3-MU-M [J].

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ARAI, S .

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