HIGH-POWER HIGH-GAIN MONOLITHICALLY INTEGRATED PREAMPLIFIER POWER-AMPLIFIER

被引：11

作者：

YEH, PS ^{[1
]}

WU, IF ^{[1
]}

JIANG, S ^{[1
]}

DAGENAIS, M ^{[1
]}

机构：

[1] UNIV MARYLAND,JOINT PROGRAM ADV ELECTR MAT,COLLEGE PK,MD 20742

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 22期

关键词：

INTEGRATED OPTOELECTRONICS; SEMICONDUCTOR LASERS; OPTICAL AMPLIFIERS;

D O I：

10.1049/el:19931319

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The monolithic integration of an index-guided single lateral mode optical preamplifier with a power tapered semiconductor laser amplifier is reported. With a coupled input power of only 6 mW, 4.5W of output power is obtained at 810nm. The far-field pattern is dominated by a diffraction-limited single lobe. An internal small signal gain of 35dB is demonstrated.

引用

页码：1981 / 1983

页数：3

共 8 条

[1] 3.3W CW DIFFRACTION LIMITED BROAD AREA SEMICONDUCTOR AMPLIFIER [J].

GOLDBERG, L ;

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ELECTRONICS LETTERS, 1992, 28 (12) :1082-1084

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APPLIED PHYSICS LETTERS, 1992, 61 (06) :633-635

[3] HIGH-POWER, STRAINED-LAYER AMPLIFIERS AND LASERS WITH TAPERED GAIN REGIONS [J].

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IEEE PHOTONICS TECHNOLOGY LETTERS, 1993, 5 (06) :605-608

[4] 4.5W CW, NEAR-DIFFRACTION-LIMITED TAPERED-STRIPE SEMICONDUCTOR OPTICAL AMPLIFIER [J].

MEHUYS, D ;

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ELECTRONICS LETTERS, 1993, 29 (02) :219-221

[5] 2.0W CW, DIFFRACTION-LIMITED TAPERED AMPLIFIER WITH DIODE INJECTION [J].

MEHUYS, D ;

WELCH, DF ;

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ELECTRONICS LETTERS, 1992, 28 (21) :1944-1946

[6]

PARKE R, 1993, CLEO 93, P108

[7] HIGH-POWER STRAINED-LAYER INGAAS/ALGAAS TAPERED TRAVELING-WAVE AMPLIFIER [J].

WALPOLE, JN ;

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CHINN, SR ;

WANG, CA ;

MISSAGGIA, LJ .

APPLIED PHYSICS LETTERS, 1992, 61 (07) :740-741

[8]

WU IF, IEEE PHOTONIC TECH L, V4, P991

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