INTENSITY MODULATED PHOTOCURRENT SPECTROSCOPY OF N-GAAS

[1] THE PHOTO-ELECTROCHEMICAL KINETICS OF P-TYPE GAP [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (10) : 2254 - 2261

[2] DETAILED ANALYSIS OF A REDOX STABILIZED LIQUID JUNCTION SOLAR-CELL - APPLICATION TO THE N-GAAS/(SE2-/SE22-) CELL [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (12) : 2352 - 2357

[3] BAND-EDGE SHIFT AND SURFACE-CHARGES AT ILLUMINATED N-GAAS AQUEOUS-ELECTROLYTE JUNCTIONS - SURFACE-STATE ANALYSIS AND SIMULATION OF THEIR OCCUPATION RATE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (01) : 45 - 52

[4] FLAT-BAND POTENTIAL DETERMINATION AND SURFACE MODIFICATIONS AT SEMICONDUCTOR LIQUID JUNCTIONS [J]. SOLID STATE COMMUNICATIONS, 1985, 55 (01) : 49 - 53

[5] DEPLETION-LAYER PHOTOEFFECTS IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1959, 116 (01): : 84 - 87

[6] HELLER A, 1981, ACS S, V146

[7] SURFACE RECOMBINATION AT SEMICONDUCTOR ELECTRODES .2. PHOTOINDUCED NEAR-SURFACE RECOMBINATION CENTERS IN P-GAP [J]. JOURNAL OF ELECTROANALYTICAL CHEMISTRY, 1984, 165 (1-2): : 41 - 59

[8] SURFACE RECOMBINATION AT SEMICONDUCTOR ELECTRODES .3. STEADY-STATE AND INTENSITY MODULATED PHOTOCURRENT RESPONSE [J]. JOURNAL OF ELECTROANALYTICAL CHEMISTRY, 1985, 193 (1-2): : 27 - 47

[9] SURFACE RECOMBINATION AT SEMICONDUCTOR ELECTRODES .4. STEADY-STATE AND INTENSITY MODULATED PHOTOCURRENTS AT NORMAL-GAAS ELECTRODES [J]. JOURNAL OF ELECTROANALYTICAL CHEMISTRY, 1986, 199 (01) : 1 - 26

[10] EFFECTS OF CATIONS ON THE PERFORMANCE OF THE PHOTOANODE IN THE N-GAAS-K2SE-K2SE2-KOH-C SEMICONDUCTOR LIQUID JUNCTION SOLAR-CELL [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (06) : 954 - 960

[1] THE PHOTO-ELECTROCHEMICAL KINETICS OF P-TYPE GAP [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (10) : 2254 - 2261

[2] DETAILED ANALYSIS OF A REDOX STABILIZED LIQUID JUNCTION SOLAR-CELL - APPLICATION TO THE N-GAAS/(SE2-/SE22-) CELL [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (12) : 2352 - 2357

[3] BAND-EDGE SHIFT AND SURFACE-CHARGES AT ILLUMINATED N-GAAS AQUEOUS-ELECTROLYTE JUNCTIONS - SURFACE-STATE ANALYSIS AND SIMULATION OF THEIR OCCUPATION RATE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (01) : 45 - 52

[4] FLAT-BAND POTENTIAL DETERMINATION AND SURFACE MODIFICATIONS AT SEMICONDUCTOR LIQUID JUNCTIONS [J]. SOLID STATE COMMUNICATIONS, 1985, 55 (01) : 49 - 53

[5] DEPLETION-LAYER PHOTOEFFECTS IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1959, 116 (01): : 84 - 87

[6] HELLER A, 1981, ACS S, V146

[7] SURFACE RECOMBINATION AT SEMICONDUCTOR ELECTRODES .2. PHOTOINDUCED NEAR-SURFACE RECOMBINATION CENTERS IN P-GAP [J]. JOURNAL OF ELECTROANALYTICAL CHEMISTRY, 1984, 165 (1-2): : 41 - 59

[8] SURFACE RECOMBINATION AT SEMICONDUCTOR ELECTRODES .3. STEADY-STATE AND INTENSITY MODULATED PHOTOCURRENT RESPONSE [J]. JOURNAL OF ELECTROANALYTICAL CHEMISTRY, 1985, 193 (1-2): : 27 - 47

[9] SURFACE RECOMBINATION AT SEMICONDUCTOR ELECTRODES .4. STEADY-STATE AND INTENSITY MODULATED PHOTOCURRENTS AT NORMAL-GAAS ELECTRODES [J]. JOURNAL OF ELECTROANALYTICAL CHEMISTRY, 1986, 199 (01) : 1 - 26

[10] EFFECTS OF CATIONS ON THE PERFORMANCE OF THE PHOTOANODE IN THE N-GAAS-K2SE-K2SE2-KOH-C SEMICONDUCTOR LIQUID JUNCTION SOLAR-CELL [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (06) : 954 - 960