SEMICONDUCTOR ELECTRODES MODIFIED BY ELECTRODEPOSITION OF DISCONTINUOUS METAL-FILMS .1. ROLE OF THE FILM MORPHOLOGY

被引:17
作者
ALLONGUE, P
SOUTEYRAND, E
机构
[1] Allongue, P.
[2] Souteyrand, E.
关键词
28;
D O I
10.1016/0022-0728(89)85144-7
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
引用
收藏
页码:361 / 374
页数:14
相关论文
共 28 条
[1]   CHARGE-TRANSFER AND STABILIZATION AT ILLUMINATED N-GAAS AQUEOUS-ELECTROLYTE JUNCTIONS [J].
ALLONGUE, P ;
CACHET, H .
ELECTROCHIMICA ACTA, 1988, 33 (01) :79-87
[2]   STEADY-STATE PHOTOCAPACITANCE STUDY OF SEMICONDUCTOR ELECTROLYTE JUNCTIONS .2. SURFACE-STATE DISTRIBUTION AND CHARGE-TRANSFER MECHANISMS [J].
ALLONGUE, P .
BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 1988, 92 (08) :895-903
[3]   BAND-EDGE SHIFT AND SURFACE-CHARGES AT ILLUMINATED N-GAAS AQUEOUS-ELECTROLYTE JUNCTIONS - SURFACE-STATE ANALYSIS AND SIMULATION OF THEIR OCCUPATION RATE [J].
ALLONGUE, P ;
CACHET, H .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (01) :45-52
[4]   CHARGE-TRANSFER PROCESS AT ILLUMINATED SEMICONDUCTOR ELECTROLYTE JUNCTIONS MODIFIED BY ELECTRODEPOSITION OF MICROSCOPIC METAL GRAIN [J].
ALLONGUE, P ;
SOUTEYRAND, E ;
ALLEMAND, L .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1989, 136 (04) :1027-1033
[5]   FLAT-BAND POTENTIAL DETERMINATION AND SURFACE MODIFICATIONS AT SEMICONDUCTOR LIQUID JUNCTIONS [J].
ALLONGUE, P ;
CACHET, H .
SOLID STATE COMMUNICATIONS, 1985, 55 (01) :49-53
[6]  
ALLONGUE P, IN PRESS
[7]  
ALLONGUE P, 1988, 1987 P S PHOT PHOT S
[8]  
ALLONGUE P, 1989, 1ST P INT S EL IMP S
[9]  
BINDRA P, 1981, 158TH P S EL EL SOC, V816
[10]  
BOCKRIS JO, 1985, J PHYS CHEM-US, V89, P2964