THE FORMATION MECHANISM OF PLANAR DEFECTS IN COMPOUND SEMICONDUCTORS GROWN EPITAXIALLY ON (100) SILICON SUBSTRATES

被引：88

作者：

ERNST, F

PIROUZ, P

机构：

来源：

关键词：

D O I：

10.1557/JMR.1989.0834

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：834 / 842

页数：9

共 19 条

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