CHARGE CARRIER TRANSPORT IN ORIENTED PARA-QUATERPHENYL LAYERS

Charge carrier transport in oriented p-quaterphenyl films was investigated using drift mobility experiments. The carrier mobility in these layers is found to be approximately 10-5 cm2 V-1 s-1 for both holes and electrons. The activation energy of the mobility is very low (approximately 0.025 eV). Carrier transport through the oriented p-quaterphenyl layers may be interpreted in terms of a hopping model. Good agreement of experimental data with the theoretical model is obtained. © 1979.