TEMPERATURE-DEPENDENCE OF ELECTRON-CONCENTRATION IN CADMIUM ARSENIDE

被引：22

作者：

BLOM, FAP

GELTEN, MJ

机构：

[1] Department of Physics, Eindhoven University of Technology, Eindhoven

来源：

PHYSICAL REVIEW B | 1979年 / 19卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.19.2411

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

From measurements of the temperature dependence of the electron concentration in Cd3As2, we found values for the conduction-band parameters that are in good agreement with those recently reported by Aubin, Caron, and Jay-Gerin. However, in contrast with these authors we found no small overlap, but a relatively large gap of 26 meV between the heavy-hole band maximum and the conduction-band minimum. © 1979 The American Physical Society.

引用

页码：2411 / 2413

页数：3

共 14 条

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