DISORDER-INDUCED MIXING OF INGAAS/INP MULTIPLE QUANTUM-WELLS BY PHOSPHORUS IMPLANTATION FOR OPTICAL WAVE-GUIDES

Disorder-induced mixing of In0.53Ga0.47As/InP multiple quantum wells has been achieved using phosphorus implantation and subsequent annealing. Photoluminescence has been used as a characterization technique and the results show that the mixing process is related to implantation damage, in agreement with previously published work. The results also suggest that when the implantation renders the material amorphous the mixing process is inhibited. Phosphorus implantation has been used to fabricate stripe optical waveguides which exhibit lateral confinement with propagation losses of around 4 dB cm-1.