PROPERTIES OF (ZN1-XMNX)3AS2-DELTA-X EPITAXIALLY GROWN ON INP

(Zn1-xMnx)3As2-δx alloys grown by molecular beam epitaxy on (100) InP substrates are characterized by X-ray diffraction, photoluminescence, and Hall measurements. They are found to have good crystalline quality for x values up to {minus sign, dot below}0.1. In this composition range, both the lattice constant and the direct band-gap energy are found to decrease slightly with the Mn concentration. This unusual behavior may be related to the existence of As vacancies as previously reported for the Li-Mn-As system. © 1990.