SYNTHESIS OF SINGLE-CRYSTAL SNS2 BY CHEMICAL VAPOR TRANSPORT METHOD AT LOW-TEMPERATURE USING REVERSE TEMPERATURE-GRADIENT

Using the chemical vapor transport technique at lower temperature than that ever reported, single crystals of SnS2 were successfully grown. The reverse temperature gradient (the transport zone at T1 = 419-438-degrees-C and growing zone at T2 = 449-455-degrees-C) was another characteristic feature in this method. The reasons why SnS2 single crystals can be grown at low temperatures were investigated from the view point of impurities, particle diameter, chemical binding energy and crystalline condition of the starting materials. It was found that lattice defects generated by grinding polycrystalline SnS2 and decomposition products of SnCl4 or SnCl4.5H2O as transport agents were necessary for the growth of single crystalline SnS2.