EVIDENCE FOR SUPERCONDUCTIVE MICROSEGREGATIONS IN TIN-DOPED BISMUTH

被引:10
作者
HEREMANS, J
BOXUS, J
ISSI, JP
机构
[1] Université Catholique de Louvain, Laboratoire de Physico-Chimie et de Physique de l'Etat Solide, B-1348 Louvain-la-Neuve
来源
PHYSICAL REVIEW B | 1979年 / 19卷 / 07期
关键词
D O I
10.1103/PhysRevB.19.3476
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Results on the resistivity drop around 3.7 K, observed in pulled tin-doped (0.004- to 0.3-at.% Sn) bismuth single crystals, are reported. The drop is ascribed to the superconductive transition of segregated metallic tin in the p-type bismuth matrix. This is confirmed by the behavior observed in a magnetic field. It is suggested that these segregations, which could not be detected by classical methods of analysis, should be taken into account in interpreting the electronic properties and the scattering mechanisms in tin-doped bismuth. © 1979 The American Physical Society.
引用
收藏
页码:3476 / 3481
页数:6
相关论文
共 7 条
[1]  
BOXUS J, UNPUBLISHED
[2]  
Jones H., 1934, P R SOC LONDON A, V147, P396, DOI DOI 10.1098/RSPA.1934.0224
[3]  
MAXWELL JC, 1904, TREATISE ELECTRICITY
[4]  
NOOTHOVENVANGOO.JM, 1971, 4 PHIL RES REP
[6]   The electrical resistance of bismuth alloys [J].
Thompson, N .
PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1936, 155 (A884) :0111-0123
[7]   SUPERCONDUCTIVITY IN LIGHTLY DOPED CRYSTALLINE BISMUTH [J].
UHER, C ;
OPSAL, JL .
PHYSICAL REVIEW LETTERS, 1978, 40 (23) :1518-1521