INTEGRATED SI/COSI2/SI-HETEROTRANSISTORS AT HIGH-CURRENT DENSITIES

被引：1

作者：

UFFMANN, D

ADAMSKI, C

机构：

[1] Institut für Halbleitertechnologie, Laboratorium für Informationstechnologie, Universität Hannover, D-3000 Hannover

来源：

MICROELECTRONIC ENGINEERING | 1991年 / 15卷 / 1-4期

关键词：

Emitter Current Density - Pinhold Density - Si Heterotransistors;

D O I：

10.1016/0167-9317(91)90178-G

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have fabricated integrated Si/CoSi2/Si-heterotransistors by MBE. The common-base current gain of the devices is correlated to pinhole size and density. The electrical behaviour is investigated up to an emitter current density of 6000A/cm2. A decrease of current gain at high current densities is observed for devices with higher pinhole density. For devices with lower pinhole density, space charge effects will lead to an increase of emitter-to-collector delay time at high current densities.

引用

页码：35 / 38

页数：4