EXPLOITING ENERGY-DEPENDENT PHOTOEMISSION IN SI D-METAL INTERFACES - THE SI(111)-PD CASE

被引：40

作者：

ABBATI, I ^{[1
]}

ROSSI, G ^{[1
]}

LINDAU, I ^{[1
]}

SPICER, WE ^{[1
]}

机构：

[1] STANFORD UNIV, STANFORD ELECTR LABS, STANFORD, CA 94305 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1981年 / 19卷 / 03期

关键词：

D O I：

10.1116/1.571077

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：636 / 640

页数：5

共 18 条

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[8] MANY-ELECTRON SINGULARITY IN X-RAY PHOTOEMISSION AND X-RAY LINE SPECTRA FROM METALS
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[J]. JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1970, 3 (02): : 285 - &
[9] REACTIVE SCHOTTKY-BARRIER FORMATION - THE PD-SI INTERFACE
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05): : 916 - 919
[10] MICROSCOPIC COMPOUND FORMATION AT THE PD-SI(111) INTERFACE
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[J]. PHYSICAL REVIEW LETTERS, 1979, 43 (24) : 1836 - 1839