TEMPERATURE-DEPENDENCE OF CSI(T1) ABSOLUTE SCINTILLATION YIELD

被引：59

作者：

VALENTINE, JD ^{[1
]}

WEHE, DK ^{[1
]}

KNOLL, GF ^{[1
]}

MOSS, CE ^{[1
]}

机构：

[1] UNIV MICHIGAN,DEPT NUCL ENGN,ANN ARBOR,MI 48109

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1993年 / 40卷 / 04期

关键词：

D O I：

10.1109/TNS.1993.8526779

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A cubic CsI(Tl) crystal of 0.8 cm on a side was mounted on a 1 x 1 cm square photodiode to measure the absolute scintillation yield of CsI(Tl) between - 100 and + 50-degrees-C. The room temperature yield was measured to be 64,800 +/- 3,200 photons / MeV. The maximum yield was observed to occur at about - 35-degrees-C, approximately 6% above the room temperature yield. The yield was observed to decrease monotonically above and below this maximum. At - 100 and + 50-degrees-C the yield was measured to be about 64% and 95% of the room temperature yield, respectively. Over the range of - 55 to + 50-degrees-C the scintillation yield was observed to remain within +/- 6% of the room temperature yield. The temperature dependence of scintillation decay time, scintillation emission spectrum, and wavelength-dependent photodiode quantum efficiency were considered.

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页码：1267 / 1274

页数：8

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