ELECTRODE SCREENING OF THE COULOMB GAP

被引：8

作者：

CUEVAS, E

ORTUNO, M

RUIZ, J

GASPARIAN, V

POLLAK, M

机构：

[1] UNIV CALIF RIVERSIDE,DEPT PHYS,RIVERSIDE,CA 92521

[2] YEREVAN STATE UNIV,DEPT PHYS,YEREVAN,ARMENIA

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1994年 / 70卷 / 06期

关键词：

D O I：

10.1080/01418639408240286

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Computer simulation of tunnelling into materials with a Coulomb gap is presented. The model system is a three-dimensional Coulomb glass lying to one side of an infinite plane. An equipotential near the plane simulates the electrode, which screens the Coulomb interaction between localized electrons in the Coulomb glass. The depth-dependent one-particle density of states is computed, and the results are then used to obtain the tunnelling conductance of the system as a function of voltage.

引用

页码：1231 / 1235

页数：5

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