LOW-THRESHOLD (GA, IN) (AS, P) DH LASERS EMITTING AT 1.55 MU-M GROWN BY LPE

Threshold current densities as low as 2·13 kA cm−2 have been achieved in broad-contact double-heterostructure lasers with an emission wavelength of 1·55 µm. The three-layer structure was grown by liquid-phase epitaxy and contained a quaternary active layer 0·6 μm thick and a p-type quaternary upper confining layer with a bandgap of 1·05 eV. The normalised threshold current density was 3·5 kA cm−2 µm−1. © 1979, The Institution of Electrical Engineers. All rights reserved.