SEMICONDUCTING PROPERTIES OF NONSTOICHIOMETRIC MANGANESE SILICIDES

被引：86

作者：

NISHIDA, I

机构：

来源：

关键词：

D O I：

10.1007/BF02403407

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：435 / &

共 29 条

[1]

Asanabe S., 1964, JPN J APPL PHYS, V3, P431, DOI [10.1143/JJAP.3.431, DOI 10.1143/JJAP.3.431]

[2]

BIENERT WB, 1966, P IEEE AIAA THERMOEL, V10, P1

[3] MECHANISM OF ELECTRICAL CONDUCTION IN BETA-FESI2 [J].

BIRKHOLZ, U ;

SCHELM, J .

PHYSICA STATUS SOLIDI, 1968, 27 (01) :413-&

BIRKHOLZ, U ;

SCHELM, J .

PHYSICA STATUS SOLIDI, 1969, 34 (02) :K177-+

[5]

BOREN B, 1933, ARK FOER KEMI MINE A, V0011

[6]

GUSEVA LN, 1957, DOKL AKAD NAUK SSSR+, V112, P681

[7]

HANSEN M, 1958, CONSTITUTION BINARY, P953

[8]

HESSE J, 1967, Z METALLK, V60, P652

[9] CURRENT CARRIER MOBILITY RATIO IN SEMICONDUCTORS [J].

HUNTER, LP .

PHYSICAL REVIEW, 1953, 91 (03) :579-581

[10]

IOFFE AF, 1960, PHYSICS SEMICONDUCTO, P305