PLASMA DEPOSITION OF AMORPHOUS AS-S FILMS

被引：11

作者：

NAGELS, P ^{[1
]}

CALLAERTS, R ^{[1
]}

VANROY, M ^{[1
]}

VLCEK, M ^{[1
]}

机构：

[1] UNIV CHEM TECHNOL, CS-53210 PARDUBICE, CZECHOSLOVAKIA

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1991年 / 137卷

关键词：

D O I：

10.1016/S0022-3093(05)80290-X

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Hydrogenated AsxS1-x thin layers have been prepared by plasma decomposition of the constituent hydrides. Microprobe analysis shows that the chemical composition and homogeneity depend not only on the AsH3/H2S ratio but also on the gas pressure. Infrared and Raman spectra reveal the presence of As4S4 and As4S3 molecular units in the structure of As rich samples. On light exposure photobleaching is observed in samples with overstoichiometry of As (x greater-than-or-equal-to 0.5).

引用

页码：1001 / 1004

页数：4

共 6 条

[1] RAMAN AND INFRARED-SPECTRA OF AS2SX CHALCOGENIDE GLASSES WITH XLESS THAN OR EQUAL TO3 [J].