GENERATION-RECOMBINATION NOISE AND DEFECT LEVELS IN SEMICONDUCTING CDSE CRYSTALS

被引：12

作者：

HOFFMANN, HJ

HUBER, E

机构：

来源：

PHYSICA B & C | 1981年 / 111卷 / 2-3期

关键词：

D O I：

10.1016/0378-4363(81)90101-7

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：249 / 256

页数：8

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