THERMAL OXIDATION AND ELECTROLYTIC ETCHING OF SILICON-CARBIDE

被引:63
作者
MUNCH, WV [1 ]
PFAFFENEDER, I [1 ]
机构
[1] TECH UNIV HANOVER,INST WERKSTOFFKUNDE A,D-3 HANOVER,FED REP GER
关键词
D O I
10.1149/1.2134280
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
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页码:642 / 643
页数:2
相关论文
共 4 条
[1]   ETCHING OF ALPHA-SILICON CARBIDE [J].
BRANDER, RW ;
BOUGHEY, AL .
BRITISH JOURNAL OF APPLIED PHYSICS, 1967, 18 (07) :905-&
[2]  
Campbell R. B., 1971, SEMICONDUCT SEMIMET, V7, P625
[3]  
Dillon J. A., 1960, SILICON CARBIDE HIGH, P235
[4]  
JORGENSEN PJ, 1960, SILICON CARBIDE, P241