CHARACTERIZATION PROCEDURES FOR DOUBLE-SIDED SILICON MICROSTRIP DETECTORS

被引:29
作者
BRUNER, NL
FRAUTSCHI, MA
HOEFERKAMP, MR
SEIDEL, SC
机构
[1] The New Mexico Center for Particle Physics, University of New Mexico, Albuquerque
关键词
D O I
10.1016/0168-9002(95)00280-4
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Since double-sided silicon microstrip detectors are still evolving technologically and are not yet commercially available, they require extensive electrical evaluation by the user to ensure they were manufactured to specifications. In addition, measurements must be performed to determine detector operating conditions. Procedures for measuring the following quantities are described.
引用
收藏
页码:315 / 337
页数:23
相关论文
共 12 条
[1]  
BARBERIS E, 1994, NUCL INSTRUM METH A, P342
[2]  
FRAUTSCHI MA, 1994, CDFDOCSECVTZPUBLIC23
[3]  
FRAUTSCHI MA, CDFDOCSECVTXPUBLIC25
[4]  
FRAUTSCHI MA, 1995, NUCL INSTRUM METH A, V1582, P521
[5]  
HONDA M, 1989, IMPEDANCE MEASUREMEN, P5
[6]   SILICON STRIP DETECTORS WITH CAPACITIVE CHARGE DIVISION [J].
KOTZ, U ;
POSNECKER, KU ;
GATTI, E ;
BELAU, E ;
BUCHHOLZ, D ;
HOFMANN, R ;
KLANNER, R ;
LUTZ, G ;
NEUGEBAUER, E ;
SEEBRUNNER, HJ ;
WYLIE, A ;
KEMMER, J .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1985, 235 (03) :481-487
[7]  
PATTON A, CDFDOCSECVTXPUBLIC28
[8]  
PEISERT A, 1992, HIGH ENERGY PHYSICS
[9]  
PEISERT A, 1992, DELPHI92143MVX2
[10]  
SZE SM, 1981, PHYSICS SEMICONDUCTO