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BAND STRUCTURE OF BI88SB12

被引：9
作者：
ANTCLIFF.GA
机构：
[1] Texas Instruments Incorporated, Dallas, TX
来源：
PHYSICS LETTERS A | 1969年 / A 28卷 / 09期
关键词：
D O I：
10.1016/0375-9601(69)90456-3
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Interpretation of Shubnikov-De Haas data for Bi88Sb12 requires a generalized four band dispersion relation. © 1989.
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页码：601 / &
相关论文
共 8 条
[1]  
BATE RT, UNPUBLISHED RESULTS
[2]   DE HAAS-VAN ALPHEN AND GALVANOMAGNETIC EFFECT IN BI AND BI-PB ALLOYS [J].
BHARGAVA, RN .
PHYSICAL REVIEW, 1967, 156 (03) :785-+
[3]   ENERGY BANDS IN BISMUTH STRUCTURE .1. A NONELLIPSOIDAL MODEL FOR ELECTRONS IN BI [J].
COHEN, MH .
PHYSICAL REVIEW, 1961, 121 (02) :387-&
[4]  
DIMMOCK JO, 1964 MIT LINC LAB QU, P41
[5]  
ELLETT MR, 1966, J PHYS SOC JPN, VS 21, P666
[6]  
GOLIN S, TO BE PUBLISHED
[7]   CYCLOTRON RESONANCE STUDIES OF FERMI SURFACES IN BISMUTH [J].
KAO, YH .
PHYSICAL REVIEW, 1963, 129 (03) :1122-&
[8]   ENERGY-BAND PARAMETERS AND RELATIVE BAND-EDGE MOTIONS IN BI-SB ALLOY SYSTEM NEAR SEMIMETAL-SEMICONDUCTOR TRANSITION [J].
LERNER, LS ;
CUFF, KF ;
WILLIAMS, LR .
REVIEWS OF MODERN PHYSICS, 1968, 40 (04) :770-&
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