PICOSECOND LUMINESCENCE OF EXCITONS LOCALIZED BY DISORDER IN CDSXSE1-X

被引：56

作者：

SHEVEL, S

FISCHER, R

GOBEL, EO

NOLL, G

THOMAS, P

KLINGSHIRN, C

机构：

[1] UNIV MARBURG, FACHBEREICH PHYS, D-3550 MARBURG, GERMANY

[2] UNIV FRANKFURT, INST PHYS, D-6000 FRANKFURT, GERMANY

来源：

关键词：

D O I：

10.1016/0022-2313(87)90181-5

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

引用

页码：45 / 50

页数：6

共 28 条

[1] FLUORESCENCE LINE NARROWING, LOCALIZED EXCITON-STATES, AND SPECTRAL DIFFUSION IN THE MIXED SEMICONDUCTOR CDSXSE1-X
COHEN, E
STURGE, MD
[J]. PHYSICAL REVIEW B, 1982, 25 (06) : 3828 - 3840
[2] EXCITONIC MOBILITY EDGE IN GAASXP1-X
GERSHONI, D
COHEN, E
RON, A
[J]. PHYSICAL REVIEW LETTERS, 1986, 56 (20) : 2211 - 2214
[3] GOBEL EO, 1982, PHYS REV LETT, V18, P1277
[4] COMPOSITIONAL DISORDER-INDUCED BROADENING FOR FREE EXCITONS IN II-VI SEMICONDUCTING MIXED-CRYSTALS
GOEDE, O
JOHN, L
HENNIG, D
[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1978, 89 (02): : K183 - K186
[5] HOPPING THEORY OF BAND-TAIL RELAXATION IN DISORDERED SEMICONDUCTORS
GRUNEWALD, M
MOVAGHAR, B
POHLMANN, B
WURTZ, D
[J]. PHYSICAL REVIEW B, 1985, 32 (12): : 8191 - 8196
[6] GROWTH BY MOLECULAR-BEAM EPITAXY AND CHARACTERIZATION OF HIGH-PURITY GAAS AND ALGAAS
HEIBLUM, M
MENDEZ, EE
OSTERLING, L
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (12) : 6982 - 6988
[7] LIFETIMES OF BOUND EXCITONS IN CDS
HENRY, CH
NASSAU, K
[J]. PHYSICAL REVIEW B, 1970, 1 (04): : 1628 - &
[8] HOGER R, 1984, J PHYS C SOLID STATE, V17, P2905
[9] INOKUTI M, 1965, J CHEM PHYS, V43, P1973
[10] SUBNANOSECOND SPECTROSCOPY OF DISORDER-LOCALIZED EXCITONS IN CDS0.53SE0.47
KASH, JA
RON, A
COHEN, E
[J]. PHYSICAL REVIEW B, 1983, 28 (10): : 6147 - 6150