QUANTUM TRANSPORT IN ULTRATHIN COSI2 EPITAXIAL-FILMS

被引:9
作者
DITUSA, JF [1 ]
PARPIA, JM [1 ]
PHILLIPS, JM [1 ]
机构
[1] AT&T BELL LABS,MURRAY HILL,NJ 07974
关键词
D O I
10.1063/1.103663
中图分类号
O59 [应用物理学];
学科分类号
摘要
Magnetotransport measurements have been performed in thin cobalt disilicide films epitaxially grown on Si(111) wafers. Films of thickness between 4.0 and 20.0 nm were studied in order to ascertain the important electron scattering rates. A temperature independent contribution to the phase breaking scattering rate was determined and attributed to spin-spin scattering of the conduction electrons which increases as the film thickness is decreased. The origin of this scattering and its importance to the low-temperature electron transport are discussed.
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页码:452 / 454
页数:3
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