LVM SPECTROSCOPY OF CARBON AND CARBON HYDROGEN PAIRS IN GAAS GROWN BY MOMBE

被引：53

作者：

WOODHOUSE, K

NEWMAN, RC

DELYON, TJ

WOODALL, JM

SCILLA, GJ

CARDONE, F

机构：

[1] Interdisciplinary Res. Centre for Semicond. Mater., Imperial Coll. of Sci., Technol. and Med., London

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1991年 / 6卷 / 05期

关键词：

D O I：

10.1088/0268-1242/6/5/003

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Cryogenic (4.2 K) infrared absorption measurements of GaAs films grown by MOMBE and containing a high concentration of carbon acceptors (approximately 2 x 10(20) cm-3) show an asymmetric Fano resonance at the frequency of the C(AS) local mode (582 cm-1). After rapid transient annealing at 950-degrees-C for 12 s in an atmosphere of helium and arsine, there is a reduction in the hole concentration, and localized vibrational model (LVM) spectroscopy reveals the presence of nearest neighbour H-C(As) passivated pairs. Previously unreported lines at 452.8 cm-1 and 563.0 cm-1 may be due to the vibrations of the passivated carbon atoms, or possibly C(Ga) donors.

引用

页码：330 / 334

页数：5

共 29 条

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