GAS-SENSITIVE SCHOTTKY GATED FIELD-EFFECT TRANSISTORS UTILIZING POLY(3-ALKYLTHIOPHENE) FILMS

被引：27

作者：

OHMORI, Y

TAKAHASHI, H

MURO, K

UCHIDA, M

KAWAI, T

YOSHINO, K

机构：

[1] Osaka University, Suita, Osaka, 565, Yamada-oka

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1991年 / 30卷 / 7B期

关键词：

POLY(3-ALKYLTHIOPHENE); CONDUCTING POLYMERS; FIELD EFFECT TRANSISTORS; METAL-SEMICONDUCTOR TRANSISTORS; SCHOTTKY CONTACTS;

D O I：

10.1143/JJAP.30.L1247

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The gas sensitivity of Schottky gated poly(3-alkylthiophene) field effect transistors has been reported. The source-drain currents have been strongly influenced by air, water and chloroform gases. A large increase in transconductance of the (field effect transistor) FET is observed in chloroform gas. This is explained by the increase of the mobility with diffusion of chloroform molecules into the poly(3-alkylthiophene) films.

引用

页码：L1247 / L1249

页数：3

共 10 条

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