HOT-ELECTRON INDUCED DEGRADATION IN ALGAAS/GAAS HEMTS

被引：7

作者：

TEDESCO, C

CANALI, C

MAGISTRALI, F

PACCAGNELLA, A

ZANONI, E

机构：

[1] Dipartimento di Elettronica ed Informatica, 35131 Padova, Via Gradenigo

[2] Facolta di Ingegneria, Universita di Modena, 41100 Modena

[3] ALCATEL-TELETTRA, 35131 Vimercate

来源：

MICROELECTRONIC ENGINEERING | 1992年 / 19卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(92)90463-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present the first data on rapid degradation of electrical characteristics induced by hot electrons in AlGaAs/GaAs HEMTs. Degradation can be attributed to deep levels generated in the access region between gate and drain contacts possibly at the interfaces between GaAs cap layer and SiN passivation and/or the semiconductor layers in the gate-drain region.

引用

页码：405 / 408

页数：4