IMPROVEMENT OF INTERFACE ELECTRONIC-PROPERTIES OF GAF3/GAAS MIS STRUCTURES

被引：5

作者：

RICARD, H

AIZAWA, K

ISHIWARA, H

机构：

[1] Precision and Intelligence Laboratory, Tokyo Institute of Technology, Midoriku, Yokohama, 227

来源：

APPLIED SURFACE SCIENCE | 1992年 / 56-8卷 / pt B期

关键词：

Semiconductor Devices; MIS;

D O I：

10.1016/0169-4332(92)90355-2

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The interface electronic properties of GaF3/GaAs structures are investigated for three different deposition procedures, the GaF3 films have been deposited on n-type GaAs expitaxial layers without breaking the vacuum, or after being exposed to air, or after being treated in (NH4)2S(x) solution. It has been found from low-temperature C-V measurements in MIS diodes that a real modulation of the Fermi level in the forbidden band gap of GaAs occurs only when the GaAs epitaxial layer is treated in the sulfur solution and annealed at an optimum temperature prior to deposition of GaF3. The unpinning mechanism is also discussed in conjunction with the simplified model for sulfur-treated GaAs surfaces.

引用

页码：888 / 893

页数：6

共 3 条

[1] THE EFFECT OF (NH4)2S TREATMENT ON THE INTERFACE CHARACTERISTICS OF GAAS MIS STRUCTURES [J].

FAN, JF ;

OIGAWA, H ;

NANNICHI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (07) :L1331-L1333

[2]

NANNICHI Y, 1990, 22ND C SOL STAT DEV, P430

[3] ELECTRICAL-PROPERTIES OF GALLIUM FLUORIDE(GAF3)/GAAS INTERFACE WITH AND WITHOUT SULFUR TREATMENT [J].

RICARD, H ;

KIM, KH ;

AIZAWA, K ;

ISHIWARA, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1990, 29 (12) :L2460-L2462

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