GROWTH AND CHARACTERIZATION OF LEAD-TIN TELLURIDE EPITAXIAL LAYERS

[1] SPONTANEOUS AND LASER EMISSION FROM PB1-XSNXTE DIODES PREPARED BY SB DIFFUSION [J]. APPLIED PHYSICS LETTERS, 1970, 17 (07) : 290 - +

[2] APPLICABILITY OF VEGARDS LAW TO PBXSN1-XTE ALLOY SYSTEM [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (04) : 1918 - &

[3] BREBRICK RF, 1966, PROGR SOLID STATE CH, V3, P217

[4] Bylander E. G., 1966, MATER SCI ENG, V1, P190

[5] CALAWA AR, 1968, MIT2 LINC LAB SOL ST, P1

[6] COKER JE, 1969, J ELECTROCHEM SOC, V116, P1021

[7] BAND STRUCTURE AND LASER ACTION IN PBXSN1-XTE [J]. PHYSICAL REVIEW LETTERS, 1966, 16 (26) : 1193 - &

[8] GRIMES DE, 1965, T METALL SOC AIME, V233, P1442

[9] Hansen M., 1958, J ELECTROCHEM SOC, DOI DOI 10.1149/1.2428700

[10] HARMAN TC, 1970 C PHYS SEM NARR

[1] SPONTANEOUS AND LASER EMISSION FROM PB1-XSNXTE DIODES PREPARED BY SB DIFFUSION [J]. APPLIED PHYSICS LETTERS, 1970, 17 (07) : 290 - +

[2] APPLICABILITY OF VEGARDS LAW TO PBXSN1-XTE ALLOY SYSTEM [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (04) : 1918 - &

[3] BREBRICK RF, 1966, PROGR SOLID STATE CH, V3, P217

[4] Bylander E. G., 1966, MATER SCI ENG, V1, P190

[5] CALAWA AR, 1968, MIT2 LINC LAB SOL ST, P1

[6] COKER JE, 1969, J ELECTROCHEM SOC, V116, P1021

[7] BAND STRUCTURE AND LASER ACTION IN PBXSN1-XTE [J]. PHYSICAL REVIEW LETTERS, 1966, 16 (26) : 1193 - &

[8] GRIMES DE, 1965, T METALL SOC AIME, V233, P1442

[9] Hansen M., 1958, J ELECTROCHEM SOC, DOI DOI 10.1149/1.2428700

[10] HARMAN TC, 1970 C PHYS SEM NARR