DOPANT-TYPE SELECTIVE ELECTROLESS PHOTOETCHING OF ZN-DIFFUSED INP AND INGAAS/INP HETEROSTRUCTURES

被引：2

作者：

WILLIAMSON, JB

CAREY, KW

机构：

[1] Hewlett Packard Laboratories, Palo Alto, California

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1993年 / 140卷 / 07期

关键词：

D O I：

10.1149/1.2220777

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Localized electroless photoetching is used successfully to visualize the p-n junction in Zn-diffused InP and InGaAs/InP heterostructures. This technique is superior to KFeCN-based etching due to greater dopant selectivity and low dark etch rate.

引用

页码：2125 / 2128

页数：4

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