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COMPETITION BETWEEN INTERFACE AND BULK PHONONS IN GAAS/A1AS AND INAS GASB QUANTUM WELLS

被引：16
作者：
DEGANI, MH
HIPOLITO, O
机构：
[1] Degani, Marcos H.
[2] Hipolito, Oscar
来源：
SUPERLATTICES AND MICROSTRUCTURES | 1989年 / 5卷 / 02期
关键词：
Phonons - Semiconducting Gallium Arsenide--Thin Films - Semiconducting Indium Compounds--Thin Films;
D O I：
10.1016/0749-6036(89)90269-3
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We present some new theoretical results on the coupling between an electron and the interface and bulk phonons in semiconductor quantum wells. The results show that the dominant contribution to the energy and effective mass comes from the interface modes in the case of thin layers.
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页码：141 / 144
页数：4
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