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A COMPARISON OF MAJORITY-CARRIER AND MINORITY-CARRIER SILICON MIS SOLAR-CELLS
被引:61
作者
:
NG, KK
论文数:
0
引用数:
0
h-index:
0
机构:
COLUMBIA UNIV,SCH ENGN & APPL SCI,DEPT ELECT ENGN,NEW YORK,NY 10027
COLUMBIA UNIV,SCH ENGN & APPL SCI,DEPT ELECT ENGN,NEW YORK,NY 10027
NG, KK
[
1
]
CARD, HC
论文数:
0
引用数:
0
h-index:
0
机构:
COLUMBIA UNIV,SCH ENGN & APPL SCI,DEPT ELECT ENGN,NEW YORK,NY 10027
COLUMBIA UNIV,SCH ENGN & APPL SCI,DEPT ELECT ENGN,NEW YORK,NY 10027
CARD, HC
[
1
]
机构
:
[1]
COLUMBIA UNIV,SCH ENGN & APPL SCI,DEPT ELECT ENGN,NEW YORK,NY 10027
来源
:
IEEE TRANSACTIONS ON ELECTRON DEVICES
|
1980年
/ 27卷
/ 04期
关键词
:
D O I
:
10.1109/T-ED.1980.19927
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:716 / 724
页数:9
相关论文
共 56 条
[1]
IV CHARACTERISTICS FOR SILICON SCHOTTKY SOLAR CELLS
[J].
ANDERSON, WA
论文数:
0
引用数:
0
h-index:
0
机构:
RUTGERS STATE UNIV,DEPT ELECT ENGN,NEW BRUNSWICK,NJ 08903
RUTGERS STATE UNIV,DEPT ELECT ENGN,NEW BRUNSWICK,NJ 08903
ANDERSON, WA
;
MILANO, RA
论文数:
0
引用数:
0
h-index:
0
机构:
RUTGERS STATE UNIV,DEPT ELECT ENGN,NEW BRUNSWICK,NJ 08903
RUTGERS STATE UNIV,DEPT ELECT ENGN,NEW BRUNSWICK,NJ 08903
MILANO, RA
.
PROCEEDINGS OF THE IEEE,
1975,
63
(01)
:206
-208
[2]
STUDIES OF TUNNEL MOS DIODES .2. THERMAL EQUILIBRIUM CONSIDERATIONS
[J].
CARD, HC
论文数:
0
引用数:
0
h-index:
0
CARD, HC
;
RHODERICK, EH
论文数:
0
引用数:
0
h-index:
0
RHODERICK, EH
.
JOURNAL OF PHYSICS D-APPLIED PHYSICS,
1971,
4
(10)
:1602
-+
[3]
CONDUCTANCE ASSOCIATED WITH INTERFACE STATES IN MOS TUNNEL STRUCTURES
[J].
CARD, HC
论文数:
0
引用数:
0
h-index:
0
CARD, HC
;
RHODERICK, EH
论文数:
0
引用数:
0
h-index:
0
RHODERICK, EH
.
SOLID-STATE ELECTRONICS,
1972,
15
(09)
:993
-+
[4]
STUDIES OF TUNNEL MOS DIODES .1. INTERFACE EFFECTS IN SILICON SCHOTTKY DIODES
[J].
CARD, HC
论文数:
0
引用数:
0
h-index:
0
CARD, HC
;
RHODERICK, EH
论文数:
0
引用数:
0
h-index:
0
RHODERICK, EH
.
JOURNAL OF PHYSICS D-APPLIED PHYSICS,
1971,
4
(10)
:1589
-+
[5]
MIS-SCHOTTKY THEORY UNDER CONDITIONS OF OPTICAL CARRIER GENERATION IN SOLAR-CELLS
[J].
CARD, HC
论文数:
0
引用数:
0
h-index:
0
机构:
COLUMBIA UNIV,DEPT ELECT ENGN & COMP SCI,NEW YORK,NY 10027
COLUMBIA UNIV,DEPT ELECT ENGN & COMP SCI,NEW YORK,NY 10027
CARD, HC
;
YANG, ES
论文数:
0
引用数:
0
h-index:
0
机构:
COLUMBIA UNIV,DEPT ELECT ENGN & COMP SCI,NEW YORK,NY 10027
COLUMBIA UNIV,DEPT ELECT ENGN & COMP SCI,NEW YORK,NY 10027
YANG, ES
.
APPLIED PHYSICS LETTERS,
1976,
29
(01)
:51
-53
[6]
EFFECT OF AN INTERFACIAL LAYER ON MINORITY-CARRIER INJECTION IN FORWARD-BIASED SILICON SCHOTTKY DIODES
[J].
CARD, HC
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MANCHESTER, INST SCI & TECHNOL, DEPT ELECTR ENGN & ELECTR, MANCHESTER, LANCASTERSHIRE, ENGLAND
UNIV MANCHESTER, INST SCI & TECHNOL, DEPT ELECTR ENGN & ELECTR, MANCHESTER, LANCASTERSHIRE, ENGLAND
CARD, HC
;
RHODERICK, EH
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MANCHESTER, INST SCI & TECHNOL, DEPT ELECTR ENGN & ELECTR, MANCHESTER, LANCASTERSHIRE, ENGLAND
UNIV MANCHESTER, INST SCI & TECHNOL, DEPT ELECTR ENGN & ELECTR, MANCHESTER, LANCASTERSHIRE, ENGLAND
RHODERICK, EH
.
SOLID-STATE ELECTRONICS,
1973,
16
(03)
:365
-374
[7]
POTENTIAL BARRIERS TO ELECTRON TUNNELLING IN ULTRATHIN FILMS OF SIO2
[J].
CARD, HC
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MANCHESTER,INST SCI & TECHNOL,DEPT ELECT ENGN & ELECTR,SACKVILLE ST,MANCHESTER 1,ENGLAND
UNIV MANCHESTER,INST SCI & TECHNOL,DEPT ELECT ENGN & ELECTR,SACKVILLE ST,MANCHESTER 1,ENGLAND
CARD, HC
.
SOLID STATE COMMUNICATIONS,
1974,
14
(10)
:1011
-1014
[8]
PHOTOVOLTAIC PROPERTIES OF MIS-SCHOTTKY BARRIERS
[J].
CARD, HC
论文数:
0
引用数:
0
h-index:
0
机构:
COLUMBIA UNIV,DEPT ELECT ENGN & COMP SCI,NEW YORK,NY 10027
COLUMBIA UNIV,DEPT ELECT ENGN & COMP SCI,NEW YORK,NY 10027
CARD, HC
.
SOLID-STATE ELECTRONICS,
1977,
20
(12)
:971
-976
[9]
COLLECTION VELOCITY OF EXCESS MINORITY-CARRIERS AT METAL-SEMICONDUCTOR CONTACTS IN SOLAR-CELLS
[J].
CARD, HC
论文数:
0
引用数:
0
h-index:
0
机构:
COLUMBIA UNIV,DEPT ELECT ENGN & COMP SCI,NEW YORK,NY 10027
COLUMBIA UNIV,DEPT ELECT ENGN & COMP SCI,NEW YORK,NY 10027
CARD, HC
.
JOURNAL OF APPLIED PHYSICS,
1976,
47
(11)
:4964
-4967
[10]
CARD HC, 1979, P INT C INSULATING F, V50, P140
←
1
2
3
4
5
6
→
共 56 条
[1]
IV CHARACTERISTICS FOR SILICON SCHOTTKY SOLAR CELLS
[J].
ANDERSON, WA
论文数:
0
引用数:
0
h-index:
0
机构:
RUTGERS STATE UNIV,DEPT ELECT ENGN,NEW BRUNSWICK,NJ 08903
RUTGERS STATE UNIV,DEPT ELECT ENGN,NEW BRUNSWICK,NJ 08903
ANDERSON, WA
;
MILANO, RA
论文数:
0
引用数:
0
h-index:
0
机构:
RUTGERS STATE UNIV,DEPT ELECT ENGN,NEW BRUNSWICK,NJ 08903
RUTGERS STATE UNIV,DEPT ELECT ENGN,NEW BRUNSWICK,NJ 08903
MILANO, RA
.
PROCEEDINGS OF THE IEEE,
1975,
63
(01)
:206
-208
[2]
STUDIES OF TUNNEL MOS DIODES .2. THERMAL EQUILIBRIUM CONSIDERATIONS
[J].
CARD, HC
论文数:
0
引用数:
0
h-index:
0
CARD, HC
;
RHODERICK, EH
论文数:
0
引用数:
0
h-index:
0
RHODERICK, EH
.
JOURNAL OF PHYSICS D-APPLIED PHYSICS,
1971,
4
(10)
:1602
-+
[3]
CONDUCTANCE ASSOCIATED WITH INTERFACE STATES IN MOS TUNNEL STRUCTURES
[J].
CARD, HC
论文数:
0
引用数:
0
h-index:
0
CARD, HC
;
RHODERICK, EH
论文数:
0
引用数:
0
h-index:
0
RHODERICK, EH
.
SOLID-STATE ELECTRONICS,
1972,
15
(09)
:993
-+
[4]
STUDIES OF TUNNEL MOS DIODES .1. INTERFACE EFFECTS IN SILICON SCHOTTKY DIODES
[J].
CARD, HC
论文数:
0
引用数:
0
h-index:
0
CARD, HC
;
RHODERICK, EH
论文数:
0
引用数:
0
h-index:
0
RHODERICK, EH
.
JOURNAL OF PHYSICS D-APPLIED PHYSICS,
1971,
4
(10)
:1589
-+
[5]
MIS-SCHOTTKY THEORY UNDER CONDITIONS OF OPTICAL CARRIER GENERATION IN SOLAR-CELLS
[J].
CARD, HC
论文数:
0
引用数:
0
h-index:
0
机构:
COLUMBIA UNIV,DEPT ELECT ENGN & COMP SCI,NEW YORK,NY 10027
COLUMBIA UNIV,DEPT ELECT ENGN & COMP SCI,NEW YORK,NY 10027
CARD, HC
;
YANG, ES
论文数:
0
引用数:
0
h-index:
0
机构:
COLUMBIA UNIV,DEPT ELECT ENGN & COMP SCI,NEW YORK,NY 10027
COLUMBIA UNIV,DEPT ELECT ENGN & COMP SCI,NEW YORK,NY 10027
YANG, ES
.
APPLIED PHYSICS LETTERS,
1976,
29
(01)
:51
-53
[6]
EFFECT OF AN INTERFACIAL LAYER ON MINORITY-CARRIER INJECTION IN FORWARD-BIASED SILICON SCHOTTKY DIODES
[J].
CARD, HC
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MANCHESTER, INST SCI & TECHNOL, DEPT ELECTR ENGN & ELECTR, MANCHESTER, LANCASTERSHIRE, ENGLAND
UNIV MANCHESTER, INST SCI & TECHNOL, DEPT ELECTR ENGN & ELECTR, MANCHESTER, LANCASTERSHIRE, ENGLAND
CARD, HC
;
RHODERICK, EH
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MANCHESTER, INST SCI & TECHNOL, DEPT ELECTR ENGN & ELECTR, MANCHESTER, LANCASTERSHIRE, ENGLAND
UNIV MANCHESTER, INST SCI & TECHNOL, DEPT ELECTR ENGN & ELECTR, MANCHESTER, LANCASTERSHIRE, ENGLAND
RHODERICK, EH
.
SOLID-STATE ELECTRONICS,
1973,
16
(03)
:365
-374
[7]
POTENTIAL BARRIERS TO ELECTRON TUNNELLING IN ULTRATHIN FILMS OF SIO2
[J].
CARD, HC
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MANCHESTER,INST SCI & TECHNOL,DEPT ELECT ENGN & ELECTR,SACKVILLE ST,MANCHESTER 1,ENGLAND
UNIV MANCHESTER,INST SCI & TECHNOL,DEPT ELECT ENGN & ELECTR,SACKVILLE ST,MANCHESTER 1,ENGLAND
CARD, HC
.
SOLID STATE COMMUNICATIONS,
1974,
14
(10)
:1011
-1014
[8]
PHOTOVOLTAIC PROPERTIES OF MIS-SCHOTTKY BARRIERS
[J].
CARD, HC
论文数:
0
引用数:
0
h-index:
0
机构:
COLUMBIA UNIV,DEPT ELECT ENGN & COMP SCI,NEW YORK,NY 10027
COLUMBIA UNIV,DEPT ELECT ENGN & COMP SCI,NEW YORK,NY 10027
CARD, HC
.
SOLID-STATE ELECTRONICS,
1977,
20
(12)
:971
-976
[9]
COLLECTION VELOCITY OF EXCESS MINORITY-CARRIERS AT METAL-SEMICONDUCTOR CONTACTS IN SOLAR-CELLS
[J].
CARD, HC
论文数:
0
引用数:
0
h-index:
0
机构:
COLUMBIA UNIV,DEPT ELECT ENGN & COMP SCI,NEW YORK,NY 10027
COLUMBIA UNIV,DEPT ELECT ENGN & COMP SCI,NEW YORK,NY 10027
CARD, HC
.
JOURNAL OF APPLIED PHYSICS,
1976,
47
(11)
:4964
-4967
[10]
CARD HC, 1979, P INT C INSULATING F, V50, P140
←
1
2
3
4
5
6
→