2-DIMENSIONAL EPITAXIAL-GROWTH OF SRTIO3 FILMS ON CARBON-FREE CLEAN SURFACE OF NB-DOPED SRTIO3 SUBSTRATE BY LASER MOLECULAR-BEAM EPITAXY

被引：31

作者：

YOSHIMOTO, M

OHKUBO, H

KANDA, N

KOINUMA, H

机构：

[1] The Research Laboratory of Engineering Materials, Tokyo Institute of Technology, Yokohama, 227

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1992年 / 31卷 / 11期

关键词：

LASER MBE; CARBON-FREE CLEAN SURFACE; 2-DIMENSIONAL EPITAXIAL GROWTH; RHEED INTENSITY OSCILLATION; SRTIO3 THIN FILM; NB-DOPED SRTIO3 SUBSTRATE;

D O I：

10.1143/JJAP.31.3664

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A carbon-free clean SrTiO3(100) surface was obtained by rinsing with acetone and ethanol and subsequent oxidation under O2 flushing of 1 x 10(-6) Torr at 650-degrees-C. A unit cell layer-by-layer growth was achieved in the laser molecular beam epitaxy growth of insulative SrTiO3 thin films on conductive Nb-doped SrTiO3 substrates thus cleaned, as verified by the observation of persisting RHEED intensity oscillation.

引用

页码：3664 / 3666

页数：3

共 7 条

[1] CERAMIC LAYER EPITAXY BY PULSED LASER DEPOSITION IN AN ULTRAHIGH-VACUUM SYSTEM [J].