EXCITONIC LUMINESCENCE OF CDTE AND CD0.87ZN0.13TE SUBMONOLAYERS IN ZNTE FILMS GROWN BY MOLECULAR-BEAM EPITAXY

被引：17

作者：

BAGAEV, VS ^{[1
]}

ZAYTSEV, VV ^{[1
]}

KALININ, VV ^{[1
]}

OKTYABRSKII, SR ^{[1
]}

PLOTNIKOV, AF ^{[1
]}

机构：

[1] RUSSIAN ACAD SCI,INST SEMICOND PHYS,NOVOSIBIRSK 630090,RUSSIA

来源：

SOLID STATE COMMUNICATIONS | 1993年 / 88卷 / 10期

关键词：

D O I：

10.1016/0038-1098(93)90876-O

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

It has been found experimentally that CdTe and Cd0,87Zn0,13Te submonolayers introduced into ZnTe give rise to a set of lines in photoluminescence (PL), Raman and reflection spectra caused by the occurrence of new excitonic states with the energy near ZnTe bandgap. The intensity of the new PL bands are always higher than that of the edge emission of ZnTe and increase by orders of magnitude when the excitonic level in the well becomes deeper. When the excitonic transitions are in resonance with Raman lines multiphonon scattering with emission of up to 13 LO phonons is observed.

引用

页码：777 / 780

页数：4

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