EXCESS-DEFECT SEMICONDUCTOR CONTACTS

被引：17

作者：

SOSNOWSKI, L

机构：

来源：

PHYSICAL REVIEW | 1947年 / 72卷 / 07期

关键词：

D O I：

10.1103/PhysRev.72.641.2

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：641 / 642

页数：2

共 7 条

[1] SURFACE STATES AND RECTIFICATION AT A METAL SEMI-CONDUCTOR CONTACT
BARDEEN, J
[J]. PHYSICAL REVIEW, 1947, 71 (10): : 717 - 727
[2] BRATTAIN WH, 1946, PHYS REV, V69, P628
[3] CONTACT POTENTIAL DIFFERENCE IN SILICON CRYSTAL RECTIFIERS
MEYERHOF, WE
[J]. PHYSICAL REVIEW, 1947, 71 (10): : 727 - 735
[4] LEAD SULPHIDE PHOTOCONDUCTIVE CELLS
SOSNOWSKI, L
STARKIEWICZ, J
SIMPSON, O
[J]. NATURE, 1947, 159 (4050) : 818 - 819
[5] PHOTOVOLTAIC EFFECTS EXHIBITED IN HIGH-RESISTANCE SEMI-CONDUCTING FILMS
STARKIEWICZ, J
SOSNOWSKI, L
SIMPSON, O
[J]. NATURE, 1946, 158 (4001) : 28 - 28
[6] ARLR8E320 ARL REP
[7] ARLR9E320 ARL REP