ELECTRICAL-PROPERTIES OF INDIUM-DOPED LEAD TIN TELLURIDE

被引：30

作者：

WEISER, K ^{[1
]}

KLEIN, A ^{[1
]}

AINHORN, M ^{[1
]}

机构：

[1] TECHNION ISRAEL INST TECHNOL,DEPT ELECT ENGN,HAIFA,ISRAEL

来源：

APPLIED PHYSICS LETTERS | 1979年 / 34卷 / 09期

关键词：

D O I：

10.1063/1.90891

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Starting at room temperature the Hall constant of In-doped lead tin telluride increases exponentially with inverse temperature, then decreases, and finally flattens out. This behavior is explained on the basis of autocompensation and the positive temperature dependence of the band gap.

引用

页码：607 / 609

页数：3

共 18 条

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