INTEGRATED OPTICAL NOR GATE

被引：8

作者：

BEYETTE, FR ^{[1
]}

GEIB, KM ^{[1
]}

FELD, SA ^{[1
]}

AN, X ^{[1
]}

HAFICH, MJ ^{[1
]}

ROBINSON, GY ^{[1
]}

WILMSEN, CW ^{[1
]}

机构：

[1] COLORADO STATE UNIV, DEPT ELECT ENGN, FT COLLINS, CO 80523 USA

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1992年 / 4卷 / 04期

关键词：

D O I：

10.1109/68.127224

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A two-input optical NOR gate structure is proposed and demonstrated. The NOR gate is fabricated from a vertically integrated heterojunction phototransistor and light emitting diode InGaAs-InP structure grown by gas source molecular beam epitaxy. Operation up to 500 kHz is demonstrated for devices fabricated with 250 x 250-mu-m2 mesas. Analysis indicates that operation at frequencies up to 50-100 MHz is possible for smaller mesa areas. On/OFF optical contrast ratios as high as 30 were measured.

引用

页码：390 / 392

页数：3

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