DEGRADATION IN INGAASP SEMICONDUCTOR-LASERS RESULTING FROM HUMAN-BODY MODEL ESD

Human Body Model (HBM) ESD testing has been performed on commercial, multifrequency InGaAsP semiconductor lasers for the purpose of identifying the relationship between ESD-induced degradation and parametric changes. Step stressing performed on lasers manufactured from 5 different wafers reveals a strong wafer dependence of forward biased failure voltage. In addition, a correlation is reported between unstressed spectral perturbations and the ESD failure voltage. A first order, rate equation model is used to simulate the variation in threshold current with ESD stress voltage. Results indicate that threshold current increases slowly with stress at voltages below the failure voltage and rapidly increases above the failure voltage, in agreement with experimental observations.