HIGH-FIELD EFFECTS IN HIGH-RESISTIVITY SILICON-CARBIDE IN LATERAL CONFIGURATIONS

被引：9

作者：

SUDARSHAN, TS

GRADINARU, G

KORONY, G

MITCHEL, W

HOPKINS, RH

机构：

[1] WESTINGHOUSE SCI & TECHNOL CTR,PITTSBURGH,PA 15235

[2] USAF,WRIGHT LAB,MLPO,WRIGHT PATTERSON AFB,OH 45433

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 23期

关键词：

D O I：

10.1063/1.115271

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Results of the high field performance of single-crystal bulk 6H-SiC of relatively high resistivity (similar to 500 Omega cm) are reported. Prebreakdown and breakdown phenomena of SIC at high fields are studied using lateral device geometries, particularly suitable for photoconductive power switches and other high voltage power devices. The influence of the electrode configuration, gap length, sample geometry, and contact technology on the high field responses of SiC is discussed. Ohmic response and relatively large hold-off fields (>80 kV/cm) are reported for this material in vacuum and SF6 gas. (C) 1995 American Institute of Physics.

引用

页码：3435 / 3437

页数：3