MAGNETORESISTIVITY OF HOT ELECTRONS IN SILICON

[1] PIEZOWIDERSTAND VON N-SILIZIUM IN ABHANGIGKEIT VON DER ELEKTRISCHEN FELDSTARKE [J]. PHYSICA STATUS SOLIDI, 1965, 11 (01): : 255 - +

[2] ABHANGIGKEIT DER ANISOTROPIE DER ELEKTRISCHEN LEITFAHIGKEIT DES SILIZIUMS VOM ELEKTRISCHEN FELD [J]. PHYSICA STATUS SOLIDI, 1965, 9 (02): : 323 - &

[3] ASCHE M, 1968, INT C PHYS SEMICOND

[4] BUDD HF, 1965, PHYS REV, V140, P2170

[5] GALVANOMAGNETIC EFFECTS IN SEMICONDUCTORS AT HIGH ELECTRIC FIELDS [J]. PHYSICAL REVIEW, 1961, 123 (02): : 454 - &

[6] MOVCHAN EA, TO BE PUBLISHED

[7] MOVCHAN EA, 1969, FIZ TEKH POLUPROV, V3

[8] HOT-ELECTRON HALL MOBILITY AND MAGNETORESISTANCE OF N-TYPE GERMANIUM FOR ELECTRIC FIELD ALONG [100] DIRECTION [J]. PHYSICS LETTERS A, 1968, A 26 (05) : 172 - &

[9] HOT-CARRIER MAGNETORESISTANCE [J]. PHYSICAL REVIEW, 1966, 150 (02): : 632 - &

[10] NAG BR, 1967, J APPL PHYS, P2425

[1] PIEZOWIDERSTAND VON N-SILIZIUM IN ABHANGIGKEIT VON DER ELEKTRISCHEN FELDSTARKE [J]. PHYSICA STATUS SOLIDI, 1965, 11 (01): : 255 - +

[2] ABHANGIGKEIT DER ANISOTROPIE DER ELEKTRISCHEN LEITFAHIGKEIT DES SILIZIUMS VOM ELEKTRISCHEN FELD [J]. PHYSICA STATUS SOLIDI, 1965, 9 (02): : 323 - &

[3] ASCHE M, 1968, INT C PHYS SEMICOND

[4] BUDD HF, 1965, PHYS REV, V140, P2170

[5] GALVANOMAGNETIC EFFECTS IN SEMICONDUCTORS AT HIGH ELECTRIC FIELDS [J]. PHYSICAL REVIEW, 1961, 123 (02): : 454 - &

[6] MOVCHAN EA, TO BE PUBLISHED

[7] MOVCHAN EA, 1969, FIZ TEKH POLUPROV, V3

[8] HOT-ELECTRON HALL MOBILITY AND MAGNETORESISTANCE OF N-TYPE GERMANIUM FOR ELECTRIC FIELD ALONG [100] DIRECTION [J]. PHYSICS LETTERS A, 1968, A 26 (05) : 172 - &

[9] HOT-CARRIER MAGNETORESISTANCE [J]. PHYSICAL REVIEW, 1966, 150 (02): : 632 - &

[10] NAG BR, 1967, J APPL PHYS, P2425